An ultra-wideband GaAs pHEMT driver amplifier for fiber optic communications at 40 Gb/s and beyond

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 70, Issue , 2002, Pages 273-274

  Heins, M S ^a   Carroll, J M ^a   Kao, M Y ^a   Steinbeiser, C F ^a   Landon, T R ^a   Campbell, C F ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC NETWORK ANALYZERS; FIBER OPTICS; HIGH ELECTRON MOBILITY TRANSISTORS; JITTER; LIGHT AMPLIFIERS; LIGHT MODULATORS; SEMICONDUCTING GALLIUM ARSENIDE;

DRIVER AMPLIFIERS (DA);

OPTICAL COMMUNICATION;

EID: 0036438030     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. R. Takeyari et al., "Fully monolithically integrated 40-Gbit/s transmitter and receiver," in OFC 2001, (Anahiem, California, 2001), pp. WO1-1-WO1-3.
2. H. Suzuki et al., "Very-High-Speed InP/In-GaAs HBT IC's for Optical Transmission Systems," in IEEE J. Solid-State Circuits 33, pp. 1313-1319, 1998.
3. M. Mokhtari et al., "InP-HBT Chip-Set for 40-Gb/s Fiber Optical Communication Systems Operational at 3V," IEEE Journal of Solid-State Circuits 32, pp. 1371-1383, 1997.
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5. S. Mohammadi et al., "Design Optimization and Characterization of High-Gain GaInP/GaAs HBT Distributed Amplifiers for High-Bit-Rate Telecommunication," IEEE Trans. Microwave Theory Tech. 48, pp. 1038-1044, 2000.
6. J. Pusl et al., "Capacitive Division Traveling-Wave Amplifier with 340 GHz Gain-Band-width Product," in 1995 IEEE MTT-S Int. Microwave Symposium Dig., (Orlando, Florida, 1995), pp. 175-178.
7. B. Agarwal et al., "80 GHz Distributed Amplifiers With Transferred-Substrate Heterojunction Bipolar Transistors," IEEE Trans. Microwave Theory Tech. 46, pp. 2302-2306, 1998.
8. K. Kobayashi et al., "A 50-MHz-55-GHz Multidecade InP-Based HBT Distributed Amplifier," IEEE Microwave and Guided Wave Lett. 7, pp. 353-355, 1997.
9. Y. Baeyens et al., "A 74-GHz Bandwidth In-AlAs/InGaAs-InP HBT Distributed Amplifier with 13-dB Gain," IEEE Microwave Guided Wave Lett. 9, 1999.
10. H. Shigematsu et al., "A 49-GHz Preamplifier With a Transimpedance Gain of 52 dBΩ Using InP HEMTs," IEEE Journal of Solid-State Circuits 36, pp. 1309-1313, 2001.