Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors

IEEE Microwave and Wireless Components Letters

Volumn 14, Issue 12, 2004, Pages 560-562

  Koudymov, A ^a   Rai, S ^a   Adivarahan, V ^a   Gaevski, M ^a   Yang, J ^a   Simin, G ^a   Khan, M A ^a  

^a University of South Carolina   (United States)

Author keywords

Field effect transistor (FET); GaN; HEMT; Heterostructure field effect transistor (HFET); Metal oxide semiconductor III N heterostructure field effect transistor (MOSHFET); RF; Switch; Wireless

Indexed keywords

CAPACITANCE; GALLIUM COMPOUNDS; GATES (TRANSISTOR); HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOS DEVICES; OPTICAL SWITCHES; THRESHOLD VOLTAGE; WIRELESS TELECOMMUNICATION SYSTEMS;

CHANNEL RESISTANCE; GAN; METAL-OXIDE-SEMICONDUCTOR III-N HETEROSTRUCTURE; RADIO FREQUENCY (RF) SWITCHES;

FIELD EFFECT TRANSISTORS;

EID: 10644291024     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2004.837381     Document Type: Article

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