Fabrication of single-electron transistor composed of a self-assembled quantum dot and nanogap electrode by atomic force microscope local oxidation

Applied Physics Express

Volumn 3, Issue 3, 2010, Pages

  Moriya, Rai ^a   Kobayashi, Hiroyuki ^a   Shibata, Kenji ^a   Masubuchi, Satoru ^a   Hirakawa, Kazuhiko ^a,b,c   Ishida, Satomi ^d   Arakawa, Yasuhiko ^a,b   MacHida, Tomoki ^a,b,c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPES; COULOMB BLOCKADE EFFECTS; HIGH QUALITY; IN-SITU; INAS QUANTUM DOTS; LOCAL OXIDATION; NANOGAP ELECTRODES; SELF ASSEMBLED QUANTUM DOTS; SELF-ASSEMBLED;

CAPACITANCE MEASUREMENT; FABRICATION; OXIDATION; SEMICONDUCTOR QUANTUM DOTS; TRANSIENTS;

SINGLE ELECTRON TRANSISTORS;

EID: 77949804612     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.035001     Document Type: Article

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