Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

Applied Physics Letters

Volumn 90, Issue 5, 2007, Pages

  Hamaya, K ^a   Masubuchi, S ^a   Kawamura, M ^a   MacHida, T ^a   Jung, M ^a   Shibata, K ^a   Hirakawa, K ^a   Taniyama, T ^b   Ishida, S ^a   Arakawa, Y ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; FERROMAGNETISM; MAGNETIC HYSTERESIS; MAGNETORESISTANCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; TUNNEL JUNCTIONS;

GATE VOLTAGE; HYSTERETIC TUNNEL MAGNETORESISTANCE (TMR) EFFECT; MAGNETIC TUNNEL JUNCTION (MTJ); SPIN TRANSPORT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846970852     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435957     Document Type: Article

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