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Applied Physics Letters

Volumn 93, Issue 6, 2008, Pages

High Kondo temperature (TK ∼80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

(2) Shibata, K a Hirakawa, K a

a INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRODES; ELECTRON TUNNELING; INDIUM ARSENIDE; KONDO EFFECT; MAGNETIC MATERIALS; METALLIZING; OPTICAL DESIGN; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM;

COULOMB BLOCKADE EFFECTS; INAS QUANTUM DOTS; KONDO TEMPERATURES; LINEAR CONDUCTANCE; METALLIC ELECTRODES; NANO GAPS; NANO-GAP ELECTRODES; QUANTUM NANOSTRUCTURES; SELF-ASSEMBLED; SINGLE-ELECTRON TUNNELING; STRONG COUPLINGS; TEMPERATURE DEPENDENCES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 49749120281 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2968206 Document Type: Article

Times cited : (14)

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