Electric-field control of tunneling magnetoresistance effect in a NiInAsNi quantum-dot spin valve

Applied Physics Letters

Volumn 91, Issue 2, 2007, Pages

  Hamaya, K ^a   Kitabatake, M ^a   Shibata, K ^a   Jung, M ^a   Kawamura, M ^a   Hirakawa, K ^a   MacHida, T ^a   Taniyama, T ^b   Ishida, S ^a,c   Arakawa, Y ^a,c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; COULOMB BLOCKADE; ELECTRIC FIELD EFFECTS; FERROMAGNETIC MATERIALS; MAGNETORESISTANCE; NICKEL;

GATE VOLTAGE; SPIN VALVE; TUNNELING MAGNETORESISTANCE (TMR);

SEMICONDUCTOR QUANTUM DOTS;

EID: 34547217909     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2759264     Document Type: Article

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