Effect of In-Ga intermixing on the electronic states in self-assembled InAs quantum dots probed by nanogap electrodes

Applied Physics Letters

Volumn 94, Issue 16, 2009, Pages

  Shibata, K ^a,b   Jung, M ^a,b   Cha, K M ^a,b   Sotome, M ^a,b   Hirakawa, K ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECT OF IN; ELECTRODE COUPLINGS; ELECTRON WAVE FUNCTIONS; INAS QUANTUM DOTS; METALLIC ELECTRODES; NANO GAPS; NANO-GAP ELECTRODES; QUANTIZATION ENERGIES; SELF-ASSEMBLED; SINGLET STATE; TUNNEL RESISTANCES;

ELECTRODES; ELECTRONIC STATES; GALLIUM; INDIUM ARSENIDE; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 65449143952     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3123816     Document Type: Article

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