Growth of atomically smooth cubic AlN by molecular beam epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 1, 2010, Pages 17-20

  Schupp, Thorsten ^a   Rossbach, Georg ^b   Schley, Pascal ^b   Goldhahn, Rüdiger ^b   Lischka, Klaus ^a   As, Donat Josef ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION EDGES; ALN; ALN LAYERS; CUBIC ALN; DIELECTRIC FUNCTIONS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SURFACE KINETICS;

ADSORPTION; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; PHOTORESISTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SILICON CARBIDE; SURFACE ROUGHNESS; TIME MEASUREMENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77949762947     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982619     Document Type: Conference Paper

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