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Volumn 92, Issue 16, 2008, Pages

Two-bit effect of trigate nanowires polycrystalline silicon thin-film-transistor nonvolatile memory with oxide/nitride/oxide gate dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; GATE DIELECTRICS; NANOWIRES; POLYSILICON; SILICON NITRIDE;

FOWLER-NORDHEIM TUNNELING; NONVOLATILE MEMORY;

THIN FILM TRANSISTORS;

EID: 42549134015 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2910460 Document Type: Article

Times cited : (10)

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