SCOPUS 정보 검색 플랫폼

Volumn 157, Issue 4, 2010, Pages

Improving the performance of tin oxide thin-film transistors by using ultralow pressure sputtering

(10) Huh, Myung Soo a,b Yang, Bong Seob a Oh, Seungha a Kim, Jeong Hwan a Du Ahn, Byung c Lee, Je Hun c Kim, Joohan c Jeong, Jae Kyeong d Hwang, Cheol Seong a Kim, Hyeong Joon a

a Seoul National University (South Korea)

b Samsung Mobile Display Company Limited (South Korea)

c SAMSUNG Electronics (South Korea)

d Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL SPUTTERING; DEVICE PERFORMANCE; FREE-ELECTRON DENSITY; NANOCRYSTALLINE PHASE; SATURATION MOBILITY; SPUTTERING PRESSURES;

PRESSURE EFFECTS; SEMICONDUCTING ORGANIC COMPOUNDS; TIN; TITANIUM COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 77949700616 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3298721 Document Type: Article

Times cited : (14)

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