Analysis of heating effect on the process of high deposition rate microcrystalline silicon

Chinese Physics B

Volumn 19, Issue 3, 2010, Pages

  Zhang, Xiao Dan ^a   Zhang, He ^a   Wei, Chang Chun ^a   Sun, Jian ^a   Hou Guo Fu, ^a   Xiong, Shao Zhen ^a   Geng, Xin Hua ^a   Zhao, Ying ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

Heating effect; High pressure and high power; Microcrystalline silicon

Indexed keywords

DISCHARGE POWER; DISCHARGE TIME; ELECTRODE DISTANCES; GAS FLOWRATE; HEATING EFFECT; HEATING TEMPERATURES; HIGH DEPOSITION RATES; HIGH INPUT POWER; HIGH PRESSURE; HIGH QUALITY; HIGH-POWER; INDUCED HEATING; MICROCRYSTALLINE SILICON THIN FILMS; SUBSTRATE SURFACE TEMPERATURE;

AERODYNAMICS; DEPOSITION; DEPOSITION RATES; ELECTRIC DISCHARGES; FLOW OF GASES; HEATING; MATERIALS PROPERTIES; PRESSURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; THIN FILMS;

MICROCRYSTALLINE SILICON;

EID: 77949675472     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/3/038101     Document Type: Article

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