메뉴 건너뛰기




Volumn 91, Issue 6, 2007, Pages 495-502

Microcrystalline silicon deposited at high rate on large areas from pure silane with efficient gas utilization

Author keywords

c Si:H; High deposition rate; Large area; Pure silane; RF PECVD

Indexed keywords

COST EFFECTIVENESS; CRYSTALLINE MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROSTRUCTURE; PHOTOVOLTAIC CELLS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILANES; SOLAR CELLS;

EID: 33847310396     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2006.10.024     Document Type: Article
Times cited : (40)

References (28)
  • 6
    • 33847284488 scopus 로고    scopus 로고
    • A.A. Howling, L. Sansonnens, J. Ballutaud, F. Grangeon, T. Delachaux, Ch. Hollenstein, V. Daudrix, U. Kroll, in: 16th European Photovoltaic Solar Energy Conference, Glasgow UK, VB1, 2000, pp. 28-32.
  • 26
    • 33847245395 scopus 로고    scopus 로고
    • Y. Tatsumi, H. Ohsaki, Density of c-Si, a-Si and a-Si:H, in: EMIS Data Reviews Series, vol. 1, Properties of Amorphous Silicon, INSPEC, London, 1989, p. 467-470.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.