Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1353-1358

  Deura, Momoko ^a   Kondo, Yoshiyuki ^a   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a   Nakano, Yoshiaki ^a,b   Sugiyama, Masakazu ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Crystal morphology; A1. Nucleation; A2. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; A3. Semiconducting III V materials

Indexed keywords

A1. CRYSTAL MORPHOLOGY; CRYSTAL MORPHOLOGIES; METAL-ORGANIC VAPOR PHASE EPITAXY; SELECTIVE EPITAXY; SEMI CONDUCTING III-V MATERIALS;

CRYSTAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTING INDIUM; VAPORS;

SEMICONDUCTOR GROWTH;

EID: 77949646517     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.005     Document Type: Article

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