Phonon-limited electron mobility behavior and inherent mobility reduction mechanism of ultrathin silicon-on-insulator layer with (111) surface and ultrathin Germanium-on-insulator layer with (001) surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 12, 2007, Pages 7654-7661

  Yamamura, Tsuyoshi ^a   Sato, Shingo ^a   Omura, Yasuhisa ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

Acoustic phonon; Double gate; FinFET; Ge(001) surface; Mobility enhancement; Phonon scattering; Si(111) surface; Ultrathin germanium; Ultrathin silicon

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; GERMANIUM COMPOUNDS; MOSFET DEVICES; PHONON SCATTERING; SILICON ON INSULATOR TECHNOLOGY;

ACOUSTIC PHONONS; DOUBLE GATES; FINFET; GE(001) SURFACE; MOBILITY ENHANCEMENT; SI(111) SURFACE; ULTRATHIN GERMANIUM; ULTRATHIN SILICON;

ELECTRON MOBILITY;

EID: 37549057984     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.7654     Document Type: Article

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