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Volumn 311, Issue 7, 2009, Pages 1778-1782
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Effect of crystallographic orientation of microchannel on low-angle incidence microchannel epitaxy on (0 0 1) GaAs substrate
a
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Author keywords
A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Gallium compounds; B2. Semiconducting III V materials
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Indexed keywords
ADATOMS;
CRYSTAL GROWTH;
GALLIUM COMPOUNDS;
MICROCHANNELS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WIRES;
SURFACE DIFFUSION;
A3. MOLECULAR BEAM EPITAXY;
A3. SELECTIVE EPITAXY;
ANGLE INCIDENCES;
B1. GALLIUM COMPOUNDS;
B2. SEMICONDUCTING III-V MATERIALS;
CROSS-SECTIONAL SHAPES;
CRYSTALLOGRAPHIC ORIENTATIONS;
GAAS;
GAAS SUBSTRATES;
GROWTH CONDITIONS;
GROWTH FRONTS;
INTER-SURFACE DIFFUSIONS;
LATERAL GROWTHS;
LATERAL OVERGROWTHS;
MICRO-CHANNEL EPITAXIES;
SCANNING ELECTRON MICROSCOPES;
TRAPEZOIDAL SHAPES;
TRIANGULAR SHAPES;
GALLIUM ALLOYS;
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EID: 63349093619
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.11.009 Document Type: Article |
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Times cited : (7)
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References (12)
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