Uniform InGaAs micro-discs on Si by micro-channel selective-area movpe

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2009, Pages 48-51

  Deura, M ^a   Hoshii, T ^a   Takenaka, M ^a   Takagi, S ^a   Nakano, Y ^a   Sugiyama, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

3-DIMENSIONAL; CRYSTAL SHAPES; GAS FLOWS; GROWTH AREAS; GROWTH MODES; GROWTH SEQUENCES; IN-PLANE; INAS; INITIAL STAGES; LATERAL GROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; MULTI-STEP; SI(111) SUBSTRATE; STANDARD DEVIATION; VERTICAL GROWTH;

CRYSTAL GROWTH; EPITAXIAL GROWTH; INDIUM ARSENIDE; INDIUM PHOSPHIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING SILICON COMPOUNDS;

SEMICONDUCTING INDIUM;

EID: 70349483952     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2009.5012412     Document Type: Conference Paper

References (7)

1. 2 from (111) Si Micro Channel Areas, " Phys. Stat. Sol. (c), Vol. 5, pp. 2733-2735, July 2008.
2. T. Nishinaga, T. Nakano, S. Zhang, " Epitaxial Lateral Overgrowth of GaAs by LPE, " Jpn. J. Appl. Phys., Vol. 27, pp. L964-L967, June 1988.
3. M. Shichijo, R. Nakane, S. Sugahara, and S. Takagi, " Fabrication of III-V on Insulator Structures on Si Using Microchannel Epitaxy with a Two-Step Growth Technique, " Jpn. J. Appl. Phys., Vol.46, pp. 5930-5934, September 2007.
4. A. Lubnow, G. P. Tang, H. H. Wehmann, E. Peiner, and A. Schlachetzki, " Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits, " Jpn. J. Appl. Phys., Vol. 33, pp. 3628-3634, June 1994.
5. T. Hoshii, M. Deura, M. Sugiyama, R. Nakane, S. Sugahara, M. Takenaka, Y. Nakano, and S. Takagi, " Control of Lateral and Vertical Selective Area Growth of InGaAs on (111) Si Substrates using MOVPE for III-V FET Applications, " Proc. 34th Int. Symp. Compd. Semicond., pp. 164-165, October 2007.
6. M. Deura, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, and M. Sugiyama, " Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si", J. Crystal Growth, Vol. 310, pp. 4768-4771, November 2008.
7. M. Deura, T. Hoshii, T. Yamamoto, Y. Ikuhara, M. Takenaka, S. Takagi, Y. Nakano, and M. Sugiyama, " Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy, " Appl. Phys. Express, Vol. 2, pp. 011101-1- 011101-3, January 2009.