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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 175-179

MOVPE selectively grown GaAs nano-wires with self-aligned W side gate

Author keywords

A1. Nanomaterials; A3. Selective area metal organic vapor phase epitaxy; B1. Tungsten; B2. Semiconducting gallium arsenide; B3. Field effect transistors

Indexed keywords

FIELD EFFECT TRANSISTORS; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SILICA; TRANSCONDUCTANCE; TUNGSTEN;

LATERAL GROWTH; NANOMATERIALS; SELECTIVE-AREA METAL ORGANIC VAPOR PHASE EPITAXY (SA-MOVPE); STACKED FILMS;

CRYSTAL GROWTH;

EID: 9944221404 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.073 Document Type: Conference Paper

Times cited : (10)

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