Memristive switching of single-component metallic nanowires

Nanotechnology

Volumn 21, Issue 12, 2010, Pages

  Johnson, S L ^a   Sundararajan, A ^a   Hunley, D P ^a   Strachan, D R ^a  

^a UNIVERSITY OF KENTUCKY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPONENT STRUCTURE; MEMORY DEVICE; MEMRISTOR; METALLIC ELEMENTS; METALLIC NANOWIRES; NANO SCALE; NANOSCALE CIRCUITS; PASSIVE CIRCUITS; PHYSICAL GEOMETRY; RESISTIVE SWITCHING; STATE VARIABLES;

ELECTRIC WIRE; ELECTROMIGRATION; NANOSTRUCTURED MATERIALS; PASSIVE NETWORKS;

NANOWIRES;

EID: 77949370615     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/12/125204     Document Type: Article

References (28)

1. Feynman R P, Leighton R B and Sands M L 1964 The Feynman Lectures on Physics vol II (Reading, MA: Addison-Wesley)
2. Chua L 1971 Memristor-the missing circuit element IEEE Trans. Circuit Theory 18 507-19
3. Chua L O and Sung Mo K 1976 Memristive devices and systems Proc. IEEE 64 209-23
4. Strukov D B, Snider G S, Stewart D R and Williams R S 2008 The missing memristor found Nature 453 80-3
5. Strukov D B, Borghetti J L and Williams R S 2009 Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior Small 5 1058-63
6. Yang J J, Pickett M D, Li X M, Ohlberg D A A, Stewart D R and Williams R S 2008 Memristive switching mechanism for metal/oxide/metal nanodevices Nat. Nanotechnol. 3 429-33
7. Cywar A, Bakan G, Boztug C, Silva H and Gokirmak A 2009 Phase-change oscillations in silicon microwires Appl. Phys. Lett. 94 072111
8. Driscoll T, Kim H T, Chae B G, Di Ventra M and Basov D N 2009 Phase-transition driven memristive system Appl. Phys. Lett. 95 043503
9. Berzina T, Smerieri A, Bernabo M, Pucci A, Ruggeri G, Erokhin V and Fontana M P 2009 Optimization of an organic memristor as an adaptive memory element J. Appl. Phys. 105 124515
10. Smerieri A, Berzina T, Erokhin V and Fontana M P 2008 Polymeric electrochemical element for adaptive networks: pulse mode J. Appl. Phys. 104 114513
11. Lau C N, Stewart D R, Williams R S and Bockrath M 2004 Direct observation of nanoscale switching centers in metal/molecule/metal structures Nano Lett. 4 569-72
12. Donhauser Z J et al 2001 Conductance switching in single molecules through conformational changes Science 292 2303-7
13. Collier C P, Wong E W, Belohradsky M, Raymo F M, Stoddart J F, Kuekes P J, Williams R S and Heath J R 1999 Electronically configurable molecular-based logic gates Science 285 391-4
14. Keane Z K, Ciszek J W, Tour J M and Natelson D 2006 Three-terminal devices to examine single-molecule conductance switching Nano Lett. 6 1518-21
15. Christou A 1994 Electromigration and Electronic Device Degradation (New York: Wiley-Interscience)
16. Strachan D R, Johnston D E, Guiton B S, Datta S S, Davies P K, Bonnell D A and Johnson A T C 2008 Real-time TEM imaging of the formation of crystalline nanoscale gaps Phys. Rev. Lett. 100 056805
17. Park H, Lim A K L, Park J, Alivisatos A P and McEuen P L 1999 Fabrication of metallic electrodes with nanometer separation by electromigration Appl. Phys. Lett. 75 301-3
18. Liang W, Shores M P, Bockrath M, Long J R and Park H 2002 Kondo resonance in a single-molecule transistor Nature 417 725-9
19. Johnston D E, Strachan D R and Johnson A T C 2007 Parallel fabrication of nanogap electrodes Nano Lett. 7 2774-7
20. Strachan D R, Smith D E, Fischbein M D, Johnston D E, Guiton B S, Drndic M, Bonnell D A and Johnson A T 2006 Clean electromigrated nanogaps imaged by transmission electron microscopy Nano Lett. 6 441-4
21. Strachan D R, Smith D E, Johnston D E, Park T H, Therien M J, Bonnell D A and Johnson A T 2005 Controlled fabrication of nanogaps in ambient environment for molecular electronics Appl. Phys. Lett. 86 043109
22. Wu Z M, Steinacher M, Huber R, Calame M, van der Molen S J and Schonenberger C 2007 Feedback controlled electromigration in four-terminal nanojunctions Appl. Phys. Lett. 91 053118
23. Shih V C-Y, Zheng S, Chang A and Tai Y-C 2003 Technical Digest, The 12th Int. Conf. on Solid-State Sensors, Actuators and Microsystems (Transducers' 03) (Boston) pp1530-3
24. Houck A A, Labaziewicz J, Chan E K, Folk J A and Chuang I L 2005 Kondo effect in electromigrated gold break junctions Nano Lett. 5 1685-8
25. Yu L H and Natelson D 2004 The Kondo effect in C-60 single-molecule transistors Nano Lett. 4 79-83
26. Bard A J and Faulkner L R 2000 Electrochemical Methods: Fundamentals and Applications (New York: Wiley)
27. Durkan C, Schneider M A and Welland M E 1999 Analysis of failure mechanisms in electrically stressed Au nanowires J. Appl. Phys. 86 1280-6
28. Esen G and Fuhrer M S 2005 Temperature control of electromigration to form gold nanogap junctions Appl. Phys. Lett. 87 263101