Calibration and characterization of self-powered floating-gate usage monitor with single electron per second operational limit

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 57, Issue 3, 2010, Pages 556-568

  Huang, Chenling ^a   Lajnef, Nizar ^a   Chakrabartty, Shantanu ^a  

^a Michigan State University   (United States)

Author keywords

Event monitoring; Floating gate transistors; Impact ionized hot electron injection; Level crossing algorithms; Self powering; Structural health monitoring; Subthreshold analog circuits; Ultralow power sensors

Indexed keywords

CALIBRATION; CMOS INTEGRATED CIRCUITS; ELECTRON INJECTION; ELECTRONS; HOT ELECTRONS; SIGNAL PROCESSING;

EVENT MONITORING; FLOATING GATE TRANSISTORS; LEVEL CROSSING; SELF-POWERING; SUBTHRESHOLD; ULTRA-LOW-POWER SENSORS;

STRUCTURAL HEALTH MONITORING;

EID: 77949360212     PISSN: 15498328     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2009.2024976     Document Type: Article

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