Redistribution of implanted Er in SiO2 on Si studied by combined transmission electron microscopy and Rutherford backscattering analysis

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 253, Issue 5-6, 1999, Pages 305-308

  Kollewe, D ^a   Bachmann, T ^b,c   Sigle, W ^d  

^a UNIVERSITY OF STUTTGART   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c LAYERTEC GMBH   (Germany)

^d MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

Clusters; Diffusion; Erbium ion implantation; Nanoparticles

Indexed keywords

DIFFUSION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOPARTICLES; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SILICON; THERMAL EXPANSION; TRANSMISSIONS;

CLUSTERS; DEPTH DISTRIBUTION; DIFFUSION AND TRANSPORT; ERBIUM ION; HIGH DOSE; LOW DOSE; RUTHERFORD BACKSCATTERING ANALYSIS; STRAIN INDUCED;

ERBIUM;

EID: 0043283290     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(99)00022-5     Document Type: Article

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