Effects of Si nanocluster size and carrier-Er interaction distance on the efficiency of energy transfer

Journal of Luminescence

Volumn 126, Issue 2, 2007, Pages 581-589

  Gourbilleau, F ^a   Dufour, C ^a   Madelon, R ^a   Rizk, R ^a  

^a CNRS   (France)

Author keywords

Coupling rate; Erbium; Interaction distance; Lifetime; Multilayers; Photoluminescence; Reactive magnetron sputtering; Si nanocluster

Indexed keywords

CRYSTALLIZATION; ENERGY GAP; ENERGY TRANSFER; HIGH TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; MULTILAYERS; PHOTOLUMINESCENCE; PROBABILITY; REACTIVE SPUTTERING; SILICON;

COUPLING RATES; PHONON TRANSITION; REACTIVE MAGNETRON SPUTTERING; RESONANT EXCITATION;

NANOCLUSTERS;

EID: 34248578266     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.10.008     Document Type: Article

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