Photoluminescence of erbium-doped silicon: Excitation power and temperature dependence

Journal of Applied Physics

Volumn 88, Issue 3, 2000, Pages 1443-1455

  Thao, D T X ^a,b   Ammerlaan, C A J ^a   Gregorkiewicz, T ^a  

^a UNIVERSITY OF AMSTERDAM   (Netherlands)

^b HANOI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000877936     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373837     Document Type: Article

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