The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance

Chinese Physics

Volumn 15, Issue 2, 2006, Pages 460-465

  Xuan, Kai ^a,b   Yan, Xiao Hong ^b   Ding, Shu Long ^a   Yang, Yu Rong ^a   Xiao, Yang ^a   Guo, Zhao Hui ^b  

^a XIANGTAN UNIVERSITY   (China)

^b NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

Author keywords

Field emission; Interface junction; Ohmic contact; P n junction

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON EMISSION; HETEROJUNCTIONS; SEMICONDUCTOR JUNCTIONS; SILICON; ZINC OXIDE;

FIELD EMISSION; INTERFACE JUNCTION; OHMIC CONTACT; P-N JUNCTION;

ELECTRON TRANSITIONS;

EID: 31044440378     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/15/2/038     Document Type: Article

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