Effects of thermal annealing on the morphology of the AlxGa(1-x)N films

Materials Science in Semiconductor Processing

Volumn 12, Issue 6, 2009, Pages 238-242

  Corekci S ^a   Tekeli, Z ^a   Cakmak M ^a   Ozcelik S ^a   Dinc Y ^b   Zeybek, O ^b   Ozbay E ^c  

^a GAZI UNIVERSITY   (Turkey)

^b BALIKESIR UNIVERSITY   (Turkey)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

Atomic force microscope; Morphology of films

Indexed keywords

AL-CONTENT; ANNEALING TREATMENTS; ATOMIC FORCE MICROSCOPE; ATOMIC FORCE MICROSCOPES; GAS AMBIENTS; RMS ROUGHNESS; ROOT MEAN SQUARE ROUGHNESS; THERMAL-ANNEALING;

ALUMINUM; ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMS; GALLIUM; METALLIC FILMS; MORPHOLOGY;

SURFACE MORPHOLOGY;

EID: 77649234769     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2009.12.004     Document Type: Article

References (26)

1. Razeghi M., and Rogalski A. J Appl Phys 79 (1996) 7433
2. Boudjelida B., Simmonds M.C., Gee I., and Clark S.A. Appl Surf Sci 252 (2006) 5189
3. Xing H., Keller S., Wu Y.-F., McCarthy L., Smorchkova I.P., Buttari D., et al. J Phys: Condens Matter 13 (2001) 7139
4. Obata T., Hirayama H., Aoyagi Y., and Ishibashi K. Phys Stat Sol A 201 (2004) 2803
5. Ko T.K., Chang S.J., Su Y.K., Lee M.L., Chang C.S., Lin Y.C., et al. J Cryst Growth 283 (2005) 68
6. Yu H., Caliskan D., and Ozbay E. J Appl Phys 100 (2006) 033501
7. Lester S.D., Ponce F.A., Craford M.G., and Steigerwald D.A. Appl Phys Lett 66 (1995) 31249
8. Rajasingam S., Sarua A., Kuball M., Cherodian A., Miles M.J., Younes C.M., et al. J Appl Phys 94 (2003) 6366
9. Chand N., People R., Baiocoohi F.A., Wetch K.W., and Cho A.Y. Appl Phys Lett 49 (1986) 815
10. Matyi R.Y., Lee J.W., and Schaake H.F. J Electron Mater 17 (1988) 87
11. Yamaguchi M., Tachikawa M., Itoh Y., Sugo M., and Kondo S. J Appl Phys 68 (1990) 4518
12. Kumar M.S., Sonia G., Ramakrishnan V., Dhanasekaran R., and Kumar J. Physica B 324 (2002) 223
13. Siegle H., Kaczmarczyk G., Filippidis L., Litvinchuk A.P., Hoffmann A., and Thomsen C. Phys Rev B 55 (1997) 7000
14. Hong J., Lee J.W., MacKenzie J.D., Donovan S.M., Abernathy C.R., Pearton S.J., et al. Semicond Sci Technol 12 (1997) 1310
15. Zolper J.C., Crawford M.H., Howard A.J., Ramer J., and Hersee S.D. Appl Phys Lett 68 (1996) 200
16. Oh E., Kim B., Park H., and Park Y. Appl Phys Lett 73 (1998) 1883
17. Stephenson G.B., Eastman J.A., Thompson C., Auciello O., Thompson L.J., Munkholm A., et al. Appl Phys Lett 74 (1999) 3326
18. Bai J., Dudley M., Sun W.H., Wang H.M., and Asif Khan A. Appl Phys Lett 88 (2006) 051903
19. Vetury R., Zhang N.Q., Keller S., and Mishra U.K. IEEE Trans Electron Dev 48 (2001) 560
20. Binari S.C., Ikossi K., Roussos J.A., Kruppa W., Park D., Dietrich H.B., et al. IEEE Trans Electron Dev 48 (2001) 465
21. Torabi A., Ericson P., Yarranton E.J., and Hooke W.E. J Vac Sci Technol B 20 (2002) 1234-1237
22. Çörekçi S., Öztürk M.K., Akaoǧlu B., Çakmak M., Özçelik S., and Özbay E. J Appl Phys 101 (2007) 123502
23. Kuball M., Demangeot F., Frandon J., Renucci M.A., Massies J., Grandjean N., et al. Appl Phys Lett 73 (1998) 960
24. Liu B., Gao J., Wu K.M., and Liu C. Solid State Commun 149 (2009) 715
25. Kuball M., Demangeot F., Frandon J., Renucci M.A., Sands H., Btachelder D.N., et al. Appl Phys Lett 74 (1999) 549
26. Tao C.Z., Ke X., Ping G.L., Jian Y.Z., Bo P.Y., Yong S.Y., et al. Chin Phys Lett 23 (2006) 1257