High-temperature annealing of AlGaN: Stress, structural, and compositional changes

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6366-6371

  Rajasingam, S ^a   Sarua, A ^a   Kuball, M ^a   Cherodian, A ^a   Miles, M J ^a   Younes, C M ^a   Yavich, B ^b   Wang, W N ^b   Grandjean, N ^c  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b University of Bath   (United Kingdom)

^c CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; COMPOSITION; CRACKS; GROWTH (MATERIALS); HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; STRESS ANALYSIS; STRUCTURE (COMPOSITION);

COMPOSITIONAL CHANGES; GROWTH TEMPERATURE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0345377677     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616639     Document Type: Article

References (20)

1. S. Einfeldt, M. Dießelberg, H. Heinke, D. Hommel, D. Rudloff, J. Christen, and R. F. Davis, J. Appl. Phys. 92, 118 (2002).
2. S. Einfeldt, V. Kirchner, H. Heinke, M. Dießelberg, S. Figge, K. Vogeler, and D. Hommel, J. Appl. Phys. 88, 7029 (2000).
3. L. T. Romano, C. G. Van de Walle, J. W. Ager III, W. Götz, and R. S. Kern, J. Appl. Phys. 87, 7745 (2000).
4. A. Atkinson, T. Johnson, A. B. Harker, and S. C. Jain, Thin Solid Films 274, 106 (1996).
5. C. E. Norman, R. A. Hogg, A. J. Shields, and N. Iuzuka, Phys. Status Solidi B 216, 375 (1999).
6. D. Rudloff, T. Riemann, J. Christen, K. Vogeler, S. Einfeldt, D. Hommel, A. Kaschner, A. Hoffman, and C. Thomsen, Proceedings of the International Workshop on Nitride Semiconductors, AIP Conf. Proc. 1, 475 (2000).
7. D. Rudloff, T. Riemann, J. Christen, Q. K. K. Liu, A. Kaschner, A. Hoffman, C. Thomsen, K. Vogeler, M. Dießelberg, S. Einfeldt, and D. Hommel, Appl. Phys. Lett. 82, 367 (2003).
8. A. P. Zhang, B. Luo, J. W. Johnson, F. Ren, J. Han, and S. J. Pearton, Appl. Phys. Lett. 79, 3636 (2001).
9. M. Kuball, F. Demangeot, J. Frandon, M. A. Renucci, H. Sands, D. N. Batchelder, S. Clur, and O. Briot, Appl. Phys. Lett. 74, 549 (1999).
10. S. J. Hearne, J. Han, S. R. Lee, J. A. Floro, D. M. Follstaedt, E. Chason, and I. S. T. Tsong, Appl. Phys. Lett. 76, 1534 (2000).
11. L. E. Davis, N. C. MacDonald, P. W. Palmberg, G. E. Riach, and R. E. Weber, Handbook of Auger Electron Spectroscopy, 2nd Ed. (Physical Electronics Industries, 1990).
12. J. M. Hayes, M. Kuball, A. Bell, I. Harrison, D. Korakakis, and C. T. Foxon, Appl. Phys. Lett. 75, 2097 (1999).
13. V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, Phys. Rev. B 65, 125203 (2002).
14. D. Cherns, S. J. Henley, and F. A. Ponce, Appl. Phys. Lett. 78, 2691 (2000).
15. J.-M. Wagner and F. Bechstedt, Appl. Phys. Lett. 77, 346 (2000).
16. A. Sarua, M. Kuball, and J. E. Van Nostrand, Appl. Phys. Lett. 81, 1426 (2002).
17. V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Sernchinova, J. Appl. Phys. 82, 5097 (1997).
18. K. Shimada,. T. Sota, and K. Suzuki, J. Appl. Phys. 84, 4951 (1998).
19. M. Holtz, T. Prokofyeva, M. Seon, K. Copeland, J. Vanbuskirk, S. Williams, S. A. Nikishin, V. Tretyakov, and H. Temkin, J. Appl. Phys. 89, 7977 (2001)
20. J. Qu, J. Ling, and G. Zhang, Solid State Commun. 107, 467 (1998).