Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy

Solid State Communications

Volumn 149, Issue 17-18, 2009, Pages 715-717

  Liu, B ^a   Gao, J ^a   Wu, K M ^a   Liu, C ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

A. AlN; B. Molecular beam epitaxy; B. Rapid thermal annealing

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; FILM PREPARATION; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; PHOTORESISTS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR QUANTUM WIRES; SURFACE ROUGHNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

A. ALN; ALN FILMS; ALN THIN FILMS; ANNEALING TEMPERATURES; ATOMIC FORCES; B. MOLECULAR BEAM EPITAXY; B. RAPID THERMAL ANNEALING; BEFORE AND AFTER; FULL WIDTH AT HALF-MAXIMUM; INTERLAYER GROWTHS; ORDER OF MAGNITUDES; RADIO FREQUENCIES; ROCKING CURVES; SAPPHIRE SUBSTRATES; THREADING DISLOCATIONS; X- RAY DIFFRACTIONS;

MOLECULAR BEAMS;

EID: 63149118673     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.02.008     Document Type: Article

References (21)

1. Yamashita H., Fukui K., Misawa S., and Yoshida S. J. Appl. Phys. 50 (1979) 896
2. Slack G.A., Tanzilli R.A., Pohl R.O., and Vandersande J.W. J. Phys. Chem. Solids 48 (1987) 641
3. Ohta J., Fujioka H., Ito S., and Oshima M. Appl. Phys. Lett. 81 (2002) 2373
4. Amano H., Sawaki N., Akasaki I., and Toyoda Y. Appl. Phys. Lett. 48 (1986) 353
5. Ponce F.A., and Bour D.P. Nature London 386 (1996) 351
6. Lakin K.M., and Wang J.S. Appl. Phys. Lett. 38 (1981) 125
7. Lee S.H., Yoon K.H., and Lee J.-K. J. Appl. Phys. 92 (2002) 4062
8. Tay K.W., Huang C.L., and Wu L. J. Vac. Sci. Technol. B 23 (2005) 1474
9. Cao X.A., et al. Appl. Phys. Lett. 73 (1998) 229
10. Uyanova I.A., et al. Appl. Phys. Lett. 77 (2000) 2325
11. Renouillet L., Bru-Chevallier C., Guillot G., Gilet P., Ballet P., Duvaut P., Rolland G., and Million A. J. Appl. Phys. 91 (2002) 5902
12. Fälth J.F., Davidsson S.K., Liu X.Y., and Andersson T.G. Appl. Phys. Lett. 87 (2005) 161901
13. Bai J., Dudley M., Sun W.H., Wang H.M., and Asif Khan M. Appl. Phys. Lett. 88 (2006) 051903
14. Okada N. Kato N., Sato S., Sumii T., Nagai T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Noro T., and Bandoh A. J. Cryst. Growth 298 (2007) 349
15. Okada N., Kato N., Sato S., Sumii T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., and Bandoh A. J. Cryst. Growth 300 (2007) 141
16. Iwata S., Nanjo Y., Okuno T., Kurai S., and Taguchi T. J. Cryst. Growth 301 (2007) 461
17. Shen X.Q., Ide T., Cho S.H., Shimizu M., Hara S., and Okumura H. Appl. Phys. Lett. 77 (2000) 4013
18. Cong G.W., Lu Y., Peng W.Q., Liu X.L., Wang X.H., and Wang Z.G. J. Cryst. Growth 276 (2005) 381
19. Bläsing J., Reiher A., Dadgar A., Diez A., and Krost A. Appl. Phys. Lett. 81 (2002) 2722
20. Chen Z.T., Xu K., Guo L.P., Yang Z.J., Sua Y.Y., Yang X.L., Pan Y.B., Shen B., Zhang H., and Zhang G.Y. J. Cryst. Growth 294 (2006) 156
21. Mathis S.K., Romanov A.E., Chen L.F., Beltz G.E., Pompe W., and Specka J.S. J. Cryst. Growth 231 (2001) 371