Formation of copper islands on a native SiO 2 surface at elevated temperatures

Applied Surface Science

Volumn 256, Issue 11, 2010, Pages 3636-3641

  Čechal, Jan ^a   Polčák, Josef ^a   Kolíbal, Miroslav ^a   Bábor, Petr ^a   Šikola, Tomáš ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

Copper (Cu); Diffusion; Photoelectron spectroscopy (XPS); Scanning electron microscopy (SEM); Silicon (Si); Surface structures

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; DIFFUSION; PHOTOELECTRONS; PHOTONS; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON OXIDES; SUBSTRATES; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

CONCENTRATION GRADIENTS; COPPER CONCENTRATION; DIFFUSION LENGTH; ELEVATED TEMPERATURE; PHOTOELECTRON SPECTROSCOPY (XPS); SILICON SUBSTRATES; SITU X-RAY PHOTOELECTRON SPECTROSCOPY; TEMPERATURE REGIONS;

COPPER OXIDES;

EID: 77649190599     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.12.168     Document Type: Article

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