Copper ion diffusion in porous and nonporous SiO2-based dielectrics using bias thermal stress and thermal stress tests

Thin Solid Films

Volumn 516, Issue 12, 2008, Pages 4111-4121

  Fisher, I ^a   Eizenberg, M ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Bias thermal stress (BTS); Copper; Dielectric; Diffusion; Porous; SiO2

Indexed keywords

COPPER; DIFFUSION; POROUS MATERIALS; THERMAL STRESS;

BIAS THERMAL STRESS (BTS); POROUS SILICA-BASED FILMS;

SILICA;

EID: 40749133646     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.10.011     Document Type: Article

References (25)

1. SIA International Technology Roadmap for Semiconductors (2001), Semiconductor Industry Association, San Jose, CA
2. Wang Z., Wang H., Mitra A., Huang L., and Yan Y. Adv. Mater. 13 (2001) 746
3. Mukaigawa S., Aoki T., Shimizu Y., and Kikkawa T. Jpn. J. Appl. Phys. 39 (2000) 2189
4. Mallikarjunan A., Murarka S.P., and Lu T.M. Appl. Phys. Lett. 79 (2001) 1855
5. Rogojevic S., Jain A., Wang F., Gill W.N., Plawsky J.L., and Lu T.M. J. Electrochem. Soc. 149 (2002) F122
6. Cui H., Bhat I.B., Murarka S.P., Lu H., Hsia W.J., and Catabay W. J. Vac. Sci. Technol., B 20 (2002) 1987
7. Murarka S.P., Verner I.V., and Gutmann R.J. Copper-Fundamental Mechanisms for Microelectronic Application (2000), John Wiley and Sons, New York NY 149
8. McBrayer J.D., Swanson R.M., and Sigmon T.W. J. Electrochem. Soc. 133 (1986) 1242
9. Shacham-Diamand Y., Dedhia A., Hoffstetter D., and Oldham W.G. J. Elec-trochem. Soc. 140 (1993) 2427
10. Raghaven G., Chiang C., Anders P.B., Tzeng S.M., Villasol R., Bai G., Bohr M., and Fraser D.B. Thin Solid Films 262 (1995) 168
11. Loke A.L.S., Ryu C., Yue C.P., Cho J.S.H., and Wong S.S. IEEE Electron Device Lett. 17 (1996) 549
12. Loke A.L.S., Wong S.S., Talwalkar N.A., Wetzel J.T., Townsend P.H., Tanabe T., Vrtis R.N., Zussman M.P., and Kumar D. Mater. Res. Soc. Symp. Proc. 564 (1999) 535
13. Fisher I., Kaplan W.D., Eizenberg M., Nault M., and Weidman T. Mater. Res. Soc. Symp. Proc. 716 (2002) 355
14. I. Fisher, Ph.D. thesis, Technion - Istrael institute of technology, Haifa, Israel, 2004.
15. Annual Book of ASTM Standards. Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) structures by Capacitance-Voltage Measurements vol. 10.05 (2000) 344
16. Nicollian E.H., and Brews J.R. MOS Physics and Technology (1982), John Wiley and Sons, New-York NY
17. Angyal M.S., Shacham-Diamand Y., Reid J.S., and Nicolet M.A. Appl. Phys. Lett. 67 (1995) 2152
18. Barbottin G., Simone J.J., and Vapaille A. In: Barbottin G., and Vapaille A. (Eds). Instabilities in Silicon Devices. Silicon passivation and related instabilities vol. 1 (1986), North-Holand, New York NY 215
19. Si J.J., Ono H., Uchida K., Nozaki S., Morisaki H., and Itoh N. Appl. Phys. Lett. 79 (2001) 3140
20. Istratov A.A., and Weber E.R. Appl. Phys., A 66 (1998) 123
21. Fisher I., Kaplan W.D., and Eizenberg M. J. Appl. Phys. 95 (2004) 5762
22. A. Kohn, Ph.D. thesis, Technion- Israel institute of technology, Haifa, Israel, 2003.
23. Kohn A., Lipp E., Eizenberg M., and Shacham-Diamand Y. Appl. Phys. Lett. 85 (2004) 627629
24. K. Kedmi, M.Sc. thesis, Tel Aviv University, Tel Aviv, Israel, 2003.
25. E. Lipp, M.Sc. thesis, Technion- Israel institute of technology, Haifa, Israel, 2004.