High-performance polycrystalline silicon tft on the structure of a dopant-segregated schottky-barrier source/drain

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 228-230

  Choi, Sung Jin ^a   Han, Jin Woo ^a   Kim, Sungho ^a   Moon, Dong Il ^a   Jang, Moongyu ^b   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Dopant segregation (DS); Dopant segregated Schottky barrier (DSSB); High performance; MOSFET; Ni silicide; Schottky barrier (SB); Thin body; Thin film transistors (TFTs)

Indexed keywords

DOPANT SEGREGATION; MOS-FET; NI SILICIDE; SCHOTTKY BARRIERS; THIN BODY;

DIELECTRIC RELAXATION; MOSFET DEVICES; NICKEL COMPOUNDS; POLYSILICON; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES;

THIN FILM TRANSISTORS;

EID: 77649187284     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2038348     Document Type: Article

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