High injection efficiency and low-voltage programming in a dopant-segregated Schottky barrier (DSSB) FinFET SONOS for NOR-type flash memory

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 265-268

  Choi, Sung Jin ^a   Han, Jin Woo ^a   Jang, Moon Gyu ^b   Kim, Jin Soo ^c   Kim, Kwang Hee ^c   Lee, Gi Sung ^c   Oh, Jae Sub ^c   Song, Myeong Ho ^c   Park, Yun Chang ^c   Kim, Jeoung Woo ^c   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c National Nano Fab Center (NNFC)   (South Korea)

Author keywords

Dopant segregated; FinFET; Hot electrons; Nonvolatile memory; NOR Flash; Schottky barrier; Silicon oxide nitride oxide silicon (SONOS); Source side injection

Indexed keywords

ATOMS; DATA STORAGE EQUIPMENT; FIELD EFFECT TRANSISTORS; HOT ELECTRONS; NITRIDES; NONMETALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS;

DOPANT-SEGREGATED; FINFET; NONVOLATILE MEMORY; NOR FLASH; SCHOTTKY BARRIER; SILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS); SOURCE-SIDE INJECTION;

FLASH MEMORY;

EID: 62549165139     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2010720     Document Type: Article

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