-
1
-
-
0024612018
-
High-performance low-temperature poly-Si n-Channel TFT's for LCD
-
A. Mimura, N. Konishi, K. Ono, J. Ohwada, Y. Hosukawa, Y. Ono, T. Suzuki, K. Miyata, and H. Kawakami. "High-performance low-temperature poly-Si n-Channel TFT's for LCD," IEEE Trans. Electron Devices, vol. 6, pp. 351-359, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.6
, pp. 351-359
-
-
Mimura, A.1
Konishi, N.2
Ono, K.3
Ohwada, J.4
Hosukawa, Y.5
Ono, Y.6
Suzuki, T.7
Miyata, K.8
Kawakami, H.9
-
2
-
-
84988167224
-
14.3-in diagonal 16-color TFT-LCD panel using a-Si:H TFT's
-
May
-
K. Ichikawa, S. Suzuki, H. Machine, T. Aoki, T. Higuchi, and Y. Oana, "14.3-in diagonal 16-color TFT-LCD panel using a-Si:H TFT's," 1989 Soc. for Information Display Dig. of Tech. Papers, pp. 226-229, May 1989.
-
(1989)
1989 Soc. for Information Display Dig. of Tech. Papers
, pp. 226-229
-
-
Ichikawa, K.1
Suzuki, S.2
Machine, H.3
Aoki, T.4
Higuchi, T.5
Oana, Y.6
-
3
-
-
33747609933
-
14-in diagonal color TFT-LCD's by noninterlaced Scanning
-
M. Katayama, A. Imaya, K. Nakazawa, H. Kato, K. Yano, H. Fukuoka, Y. Kanatani, Y. Ito, and M. Hijikigawa, "14-in diagonal color TFT-LCD's by noninterlaced Scanning," in Proc. 9th Int. Display Research Conf., 1989, vol. PD-6.
-
(1989)
Proc. 9th Int. Display Research Conf.
, vol.PD-6
-
-
Katayama, M.1
Imaya, A.2
Nakazawa, K.3
Kato, H.4
Yano, K.5
Fukuoka, H.6
Kanatani, Y.7
Ito, Y.8
Hijikigawa, M.9
-
4
-
-
33747586861
-
1280 × 800-color pixcel 15-in full color active matrix LCD
-
Sept.
-
T. Wada, T. Masumori, N. Kakuda, and T. Kawada, "1280 × 800-color pixcel 15-in full color active matrix LCD," in 10th Int. Display Conf. Proc., Sept. 1990, pp. 370-373.
-
(1990)
10th Int. Display Conf. Proc.
, pp. 370-373
-
-
Wada, T.1
Masumori, T.2
Kakuda, N.3
Kawada, T.4
-
5
-
-
0025575512
-
3/ SiN double-layered gate insulator for 10.4-in diagonal multi color display
-
Dec.
-
3/ SiN double-layered gate insulator for 10.4-in diagonal multi color display," 1990 IEDM Tech. Dig., Dec. 1990, p. 851-854.
-
(1990)
1990 IEDM Tech. Dig.
, pp. 851-854
-
-
Yamamoto, H.1
Matsumura, H.2
Shirahashi, K.3
Nakatani, M.4
Sasano, A.5
Konishi, N.6
Tsutsui, K.7
Tsukada, T.8
-
6
-
-
0026222007
-
Effect of hydrogenation on the leakage currents of laser annealed poly-Si TFT's
-
T. Aoyama, Y. Koike, Y. Okajima, N. Konishi, T. Suzuki, and K. Miyata, "Effect of hydrogenation on the leakage currents of laser annealed poly-Si TFT's," IEEE Trans. Electron Devices, vol. 38, pp. 2058-2061, 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 2058-2061
-
-
Aoyama, T.1
Koike, Y.2
Okajima, Y.3
Konishi, N.4
Suzuki, T.5
Miyata, K.6
-
7
-
-
0024908311
-
High-performance TFT's fabricated by XeCl excimerlaser annealing of hydrogenated amorphous-Si films
-
K. Sera, F. Okumura, H. Uchida, S. Itoh, S. Kaneko, and K. Hotta, "High-performance TFT's fabricated by XeCl excimerlaser annealing of hydrogenated amorphous-Si films," IEEE Trans. Electron Devices, vol. 36, pp. 2868-2872, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 2868-2872
-
-
Sera, K.1
Okumura, F.2
Uchida, H.3
Itoh, S.4
Kaneko, S.5
Hotta, K.6
-
8
-
-
0024753175
-
ÅgXeCl excimer laser annealing used to fabricate poly-Si TFT's
-
T. Sameshima, M. Hara, and S. Usui, "ÅgXeCl excimer laser annealing used to fabricate poly-Si TFT's," Jpn. J. Appl. Phys., vol. 28, pp. 1789-1793, 1989.
-
(1989)
Jpn. J. Appl. Phys.
, vol.28
, pp. 1789-1793
-
-
Sameshima, T.1
Hara, M.2
Usui, S.3
-
9
-
-
0024733525
-
A full-color LCD addressed by poly-Si TFT's fabricated below 450 Åé
-
M. Yuki, K. Masumo, and M. Kunigita, "A full-color LCD addressed by poly-Si TFT's fabricated below 450 Åé," IEEE Trans. Electron Devices, vol. 36, pp. 1934-1937, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 1934-1937
-
-
Yuki, M.1
Masumo, K.2
Kunigita, M.3
-
10
-
-
33747619961
-
-
"Thin-film semiconductor device having integrated stagger structure, and having such semiconductor device," U.S. Patent 5,294,811, Mar.
-
T. Aoyama, K. Ogawa, Y. Mochizuki, N. Monma, and K. Usami, "Thin-film semiconductor device having integrated stagger structure, and having such semiconductor device," U.S. Patent 5,294,811, Mar. 1994.
-
(1994)
-
-
Aoyama, T.1
Ogawa, K.2
Mochizuki, Y.3
Monma, N.4
Usami, K.5
-
11
-
-
0029304793
-
Inverse staggered polycrystalline and amorphous silicon double thin-film transistors
-
T. Aoyama, K. Ogawa, Y. Mochizuki, and N. Konishi, "Inverse staggered polycrystalline and amorphous silicon double thin-film transistors," Appl. Phys. Lett., vol. 66, pp. 3007-3009, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 3007-3009
-
-
Aoyama, T.1
Ogawa, K.2
Mochizuki, Y.3
Konishi, N.4
-
12
-
-
33747606915
-
Hydrogen as the cause of pit formation during laser crystallization of silicon-on-insulator films
-
G. J. Willems and H. E. Maes, "Hydrogen as the cause of pit formation during laser crystallization of silicon-on-insulator films," J. Appl. Phys., vol. 66, pp. 4444-4455, 1989.
-
(1989)
J. Appl. Phys.
, vol.66
, pp. 4444-4455
-
-
Willems, G.J.1
Maes, H.E.2
-
13
-
-
0022076524
-
Ultra-shallow high-concentration boron profiles for CMOS processing
-
P. G. Caray, T. W. Sigmon, R. L. Press, and T. S. Fahlen, "Ultra-shallow high-concentration boron profiles for CMOS processing," IEEE Electron Device Lett., vol. EDL-6, pp. 291-293, 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, pp. 291-293
-
-
Caray, P.G.1
Sigmon, T.W.2
Press, R.L.3
Fahlen, T.S.4
-
14
-
-
0027839373
-
An LCD addressed by a-Si:H TFT's with peripheral poly-Si TFT circuits
-
T. Tanaka, H. Asuma, K. Ogawa, Y. Shinagawa, and N. Konishi, "An LCD addressed by a-Si:H TFT's with peripheral poly-Si TFT circuits," IEDM Tech. Dig., 1993, pp. 389-392.
-
(1993)
IEDM Tech. Dig.
, pp. 389-392
-
-
Tanaka, T.1
Asuma, H.2
Ogawa, K.3
Shinagawa, Y.4
Konishi, N.5
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