메뉴 건너뛰기




Volumn 43, Issue 5, 1996, Pages 701-705

Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; HYDROGENATION; LENSES; LIQUID CRYSTAL DISPLAYS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GLASS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SUBSTRATES;

EID: 0030150105     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.491245     Document Type: Article
Times cited : (53)

References (14)
  • 7
    • 0024908311 scopus 로고
    • High-performance TFT's fabricated by XeCl excimerlaser annealing of hydrogenated amorphous-Si films
    • K. Sera, F. Okumura, H. Uchida, S. Itoh, S. Kaneko, and K. Hotta, "High-performance TFT's fabricated by XeCl excimerlaser annealing of hydrogenated amorphous-Si films," IEEE Trans. Electron Devices, vol. 36, pp. 2868-2872, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 2868-2872
    • Sera, K.1    Okumura, F.2    Uchida, H.3    Itoh, S.4    Kaneko, S.5    Hotta, K.6
  • 8
    • 0024753175 scopus 로고
    • ÅgXeCl excimer laser annealing used to fabricate poly-Si TFT's
    • T. Sameshima, M. Hara, and S. Usui, "ÅgXeCl excimer laser annealing used to fabricate poly-Si TFT's," Jpn. J. Appl. Phys., vol. 28, pp. 1789-1793, 1989.
    • (1989) Jpn. J. Appl. Phys. , vol.28 , pp. 1789-1793
    • Sameshima, T.1    Hara, M.2    Usui, S.3
  • 9
    • 0024733525 scopus 로고
    • A full-color LCD addressed by poly-Si TFT's fabricated below 450 Åé
    • M. Yuki, K. Masumo, and M. Kunigita, "A full-color LCD addressed by poly-Si TFT's fabricated below 450 Åé," IEEE Trans. Electron Devices, vol. 36, pp. 1934-1937, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1934-1937
    • Yuki, M.1    Masumo, K.2    Kunigita, M.3
  • 10
    • 33747619961 scopus 로고
    • "Thin-film semiconductor device having integrated stagger structure, and having such semiconductor device," U.S. Patent 5,294,811, Mar.
    • T. Aoyama, K. Ogawa, Y. Mochizuki, N. Monma, and K. Usami, "Thin-film semiconductor device having integrated stagger structure, and having such semiconductor device," U.S. Patent 5,294,811, Mar. 1994.
    • (1994)
    • Aoyama, T.1    Ogawa, K.2    Mochizuki, Y.3    Monma, N.4    Usami, K.5
  • 11
    • 0029304793 scopus 로고
    • Inverse staggered polycrystalline and amorphous silicon double thin-film transistors
    • T. Aoyama, K. Ogawa, Y. Mochizuki, and N. Konishi, "Inverse staggered polycrystalline and amorphous silicon double thin-film transistors," Appl. Phys. Lett., vol. 66, pp. 3007-3009, 1995.
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 3007-3009
    • Aoyama, T.1    Ogawa, K.2    Mochizuki, Y.3    Konishi, N.4
  • 12
    • 33747606915 scopus 로고
    • Hydrogen as the cause of pit formation during laser crystallization of silicon-on-insulator films
    • G. J. Willems and H. E. Maes, "Hydrogen as the cause of pit formation during laser crystallization of silicon-on-insulator films," J. Appl. Phys., vol. 66, pp. 4444-4455, 1989.
    • (1989) J. Appl. Phys. , vol.66 , pp. 4444-4455
    • Willems, G.J.1    Maes, H.E.2
  • 13
    • 0022076524 scopus 로고
    • Ultra-shallow high-concentration boron profiles for CMOS processing
    • P. G. Caray, T. W. Sigmon, R. L. Press, and T. S. Fahlen, "Ultra-shallow high-concentration boron profiles for CMOS processing," IEEE Electron Device Lett., vol. EDL-6, pp. 291-293, 1985.
    • (1985) IEEE Electron Device Lett. , vol.EDL-6 , pp. 291-293
    • Caray, P.G.1    Sigmon, T.W.2    Press, R.L.3    Fahlen, T.S.4
  • 14
    • 0027839373 scopus 로고
    • An LCD addressed by a-Si:H TFT's with peripheral poly-Si TFT circuits
    • T. Tanaka, H. Asuma, K. Ogawa, Y. Shinagawa, and N. Konishi, "An LCD addressed by a-Si:H TFT's with peripheral poly-Si TFT circuits," IEDM Tech. Dig., 1993, pp. 389-392.
    • (1993) IEDM Tech. Dig. , pp. 389-392
    • Tanaka, T.1    Asuma, H.2    Ogawa, K.3    Shinagawa, Y.4    Konishi, N.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.