SCOPUS 정보 검색 플랫폼

Volumn 93, Issue 19, 2008, Pages

20-nm-gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors

(3) Jang, Moongyu a Choi, Cheljong b Lee, Seongjae c

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

b Chonbuk National University (South Korea)

c Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ERBIUM; FIELD EFFECT TRANSISTORS; ION BEAMS; LEAKAGE CURRENTS; PLATINUM; PLATINUM METALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SILICIDES; SUGAR (SUCROSE); TRANSISTORS;

AND GATES; CHANNEL REGIONS; MOS FETS; ON/OFF CURRENT RATIOS; SATURATION CURRENTS; SCHOTTKY BARRIER METALS; SCHOTTKY BARRIERS; SEMI-CONDUCTORS;

MOSFET DEVICES;

EID: 56249089326 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3025726 Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.