X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Electronics Letters

Volumn 43, Issue 23, 2007, Pages 1317-1318

  Sarazin, N ^a   Jardel, O ^a   Morvan, E ^a   Aubry, R ^a   Laurent, M ^a   Magis, M ^a   Tordjman, M ^a   Alloui, M ^a   Drisse, O ^a   Di Persio, J ^a   Di Forte Poisson, M A ^a   Delage, S L ^a   Vellas, N ^b   Gaquiere C ^b   Theron D ^b  

^a ALCATEL THALES III V LAB   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; TRANSCONDUCTANCE;

EXTRINSIC TRANSCONDUCTANCE VALUES; X BAND POWER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 36048954813     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072598     Document Type: Article

References (9)

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