Effect of fabrication parameters on three-dimensional nanostructures of bulk heterojunctions imaged by high-resolution scanning ToF-SIMS

ACS Nano

Volumn 4, Issue 2, 2010, Pages 833-840

  Yu, Bang Ying ^a,d   Lin, Wei Chun ^a   Wang, Wei Ben ^c   Iida, Shin Ichi ^d   Chen, Sun Zen ^c   Liu, Chia Yi ^a   Kuo, Che Hung ^b   Lee, Szu Hsian ^b   Kao, Wei Lun ^b   Yen, Guo Ji ^b   You, Yun Wen ^a   Liu, Chi Ping ^a   Jou, Jwo Huei ^c   Shyue, Jing Jong ^a,b  

^a RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d ULVAC PHI Inc   (Japan)

Author keywords

Bulk heterojunction; Nanostructure; Secondaryion mass spectrometry; Solar cell; X ray photoelectron spectrometry

Indexed keywords

3-D IMAGE; ACTIVE LAYER; BULK HETEROJUNCTION; BUTYRIC ACIDS; DEPTH PROFILE; DEVICE EFFICIENCY; DEVICE STRUCTURES; FABRICATION PARAMETERS; FRAGMENT DISTRIBUTIONS; HIGH RESOLUTION; IMAGING PROCESS; INVERTED DEVICES; ION SPUTTERING; LOW ENERGIES; METHYL ESTERS; MOLECULAR DISTRIBUTION; PHASE SEGREGATIONS; POLY (3-HEXYLTHIOPHENE); PROCESSABLE; REGIO-REGULAR; RR-P3HT; SCANNING TIME; THREE-DIMENSIONAL NANOSTRUCTURES; TOF SIMS; TOF-SIMS IMAGING; X-RAY PHOTOELECTRONS;

CESIUM; ESTERS; FATTY ACIDS; MASS SPECTROMETERS; NANOSTRUCTURES; PHASE MODULATION; PHASE SEPARATION; PHOTOIONIZATION; PHOTONS; SECONDARY ION MASS SPECTROMETRY; SOLAR CELLS; SPECTROMETRY; SPUTTERING; THREE DIMENSIONAL;

HETEROJUNCTIONS;

EID: 77649107742     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn9014449     Document Type: Conference Paper

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