TEM study of c-plane GaN layers grown on γ-LiAlO2(100)

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 12, 2008, Pages 3712-3715

  Mogilatenko, A ^a   Neumann, W ^a   Richter, E ^b   Weyers, M ^b   Velickov, B ^c   Uecker, R ^c  

^a HUMBOLDT UNIVERSITY   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION ENERGIES; GAN LAYERS; GAN PYRAMIDS; HYDRIDE VAPOR PHASE EPITAXIES; IMPURITY INCORPORATIONS; INVERSION DOMAINS; PIT FORMATIONS; PIT SURFACES; THREADING DISLOCATIONS;

CRYSTAL GROWTH; GALLIUM NITRIDE; LITHIUM ALLOYS; NANOELECTRONICS; NANOTECHNOLOGY; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 57349175527     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200780198     Document Type: Conference Paper

References (16)

1. M. C. Chou, P. S. Tsao, and H. Ch. Huang, J. Cryst. Growth 292, 542 (2006).
2. B. Velickov, A. Mogilatenko, R. Bertram, D. Klimm, R. Uecker, W. Neumann, and R. Fornari, J. Cryst. Growth, accepted.
3. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, and M. Reiche, accepted by K.H. Ploog, Nature 406, 865 (2000).
4. H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, accepted by B.H. Chai, Opto-electron. Rev. 11, 7 (2003).
5. E. S. Hellman, Z. Liliental-Weber, and N. E. Buchanan, MRS Int. J. Nitride Semicond. Res. 2, 30 (1997).
6. M. D. Reed, O. M. Kryliouk, M. A. Mastro, and T. J. Anderson, J. Cryst. Growth 274, 14 (2005).
7. E. Richter, Ch. Hennig, U. Zeimer, M. Weyers, G. Tränkle, P. Reiche, S. Ganschow, R. Uecker, and K. Peters, phys. stat. sol. (c) 3, 1439 (2006).
8. E. Richter, Ch. Hennig, L. Wang, U. Zeimer, M. Weyers, and G. Tränkle, phys. stat. sol. (c) 4, 2277 (2007).
9. A. Mogilatenko, W. Neumann, E. Richter, M. Weyers, B. Velickov, and R. Uecker, J. Appl. Phys. 102, 023519 (2007).
10. A. Mogilatenko, W. Neumann, E. Richter, M. Weyers, B. Velickov, and R. Uecker, IOP Conf. Series, Proc. MSM 13 (2007), in press.
11. L. Wang, U. Zeimer, E. Richter, Ch. Hennig, M. Herms, and M. Weyers, phys. stat. sol. (a) 203, 1663 (2006).
12. Z. Liliental-Weber, Y. Chen, S. Ruvimov, and J. Washburn, Phys. Rev. Lett. 79, 2835 (1997).
13. Z. Liliental-Weber, J. Jasinski, and J. Washburn, J. Cryst. Growth 246, 259 (2002).
14. T. I. Shin and D. H. Yoon, Cryst. Res. Technol. 40, 827 (2005).
15. H. Li, T. Wang, Y. Lacroix, N. Jiang, and S. Sakai, Jpn. J. Appl. Phys. 40, L1254 (2001).
16. Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamanda, Y. Kaneko, and S. Y. Wang, Appl. Phys. Lett 72, 710 (1998).