Free-standing non-polar gallium nitride substrates

Opto-Electronics Review

Volumn 11, Issue 1, 2003, Pages 7-17

  Maruska, H P ^a   Hill, D W ^a   Chou, M C ^a   Gallagher, J J ^a   Chai, B H ^a  

^a Crystal Photonics Inc Sanford   (United States)

Author keywords

GaN substrates; HVPE method; Nitrides

Indexed keywords

CONCENTRATION (PROCESS); DEFECTS; DENSITY (SPECIFIC GRAVITY); LEAKAGE CURRENTS; LIGHT EMITTING DIODES; LITHIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OPTOELECTRONIC DEVICES; SEMICONDUCTOR LASERS; SUBSTRATES; SURFACE PHENOMENA; THERMAL EXPANSION; THERMAL STRESS; THICK FILMS; THIN FILMS;

DEFECT-FREE DEVICE MATERIALS; LASER PERFORMANCE; LATTICE MISMATCH;

GALLIUM NITRIDE;

EID: 0041671552     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Review

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