Mechanism of LiAlO2 decomposition during the GaN growth on (100) γ-LiAlO2

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Mogilatenko, A ^a   Neumann, W ^a   Richter, E ^b   Weyers, M ^b   Velickov, B ^c   Uecker, R ^c  

^a HUMBOLDT UNIVERSITY   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLITES; FILM GROWTH; GALLIUM NITRIDE; LITHIUM COMPOUNDS; NUCLEATION; VAPOR PHASE EPITAXY;

POST-GROWTH COOLING; RECRYSTALLIZATION TIME;

OXIDE FILMS;

EID: 34547581830     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2759187     Document Type: Article

References (19)

1. H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. H. Chai, Opto-Electron. Rev. 11, 7 (2003).
2. E. S. Hellman, Z. Liliental-Weber, and N. E. Buchanan, MRS Internet J. Nitride Semicond. Res. 2, 30 (1997).
3. P. Waltereit, O. Brandt, M. Ramsteiner, A. Trampert, H. T. Grahn, J. Menniger, M. Reiche, R. Uecker, P. Reiche, and K. H. Ploog, Phys. Status Solidi A 0031-8965 10.1002/1521-396X(200007)180:1<133::AID-PSSA133>3.0.CO;2-A 180, 133 (2000).
4. M. D. Reed, O. M. Kryliouk, M. A. Mastro, and T. J. Anderson, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2004.09.079 274, 14 (2005).
5. C. Klemenz and H. J. Scheel, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(99)00831-3 211, 62 (2000).
6. E. Richter, Ch. Hennig, U. Zeimer, M. Weyers, G. Tränkle, P. Reiche, S. Ganschow, R. Uecker, and K. Peters, Phys. Status Solidi C 3, 1439 (2006).
7. Z. Liliental-Weber, J. Jasinski, and D. N. Zakharov, Opto-Electron. Rev. 12, 339 (2004).
8. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature 0028-0836 10.1038/35022529 406, 865 (2000).
9. C. Kisielowski, Semicond. Semimetals 57, 275 (1999).
10. V. S. Harutyunyan, A. P. Aivazyan, E. R. Weber, Y. Kim, Y. Park, and S. G. Subramanya, J. Phys. D 0022-3727 10.1088/0022-3727/34/10A/308 34, A35 (2001).
11. H. P. Maruska and J. J. Tietjen, Appl. Phys. Lett. 0003-6951 10.1063/1.1652845 15, 327 (1969).
12. H. Morko̧, Nitride Semiconductors and Devics (Springer Verlag, Berlin, 1999), p. 44.
13. B. Cockayne and B. Lent, J. Cryst. Growth 0022-0248 10.1016/0022-0248(81) 90511-X 54, 546 (1981).
14. F. A. Ponce, B. S. Krusor, J. S. Major, W. E. Plano, and E. F. Welch, Appl. Phys. Lett. 0003-6951 10.1063/1.114645 67, 410 (1995).
15. A. Krost and A. Dadgar, Phys. Status Solidi A 0031-8965 10.1002/1521-396X(200212)194:2<361::AID-PSSA361>3.0.CO;2-R 194, 361 (2002).
16. B. Velickov and R. Uecker, J. Cryst. Growth (to be published). 0022-0248
17. E. Richter, Ch. Hennig, M. Weyers, F. Habel, J. -D. Tsay, W. -Y. Liu, P. Brückner, F. Scholz, Yu. Makarov, A. Segal, and J. Kaeppeler, J. Cryst. Growth 277, 6 (2005). 0022-0248
18. E. Richter, Ch. Hennig, L. Wang, U. Zeimer, M. Weyers, and G. Tränkle, Phys. Status Solidi C 4, 2277 (2007). 1610-1634
19. J. Hosoi, T. Oikawa, M. Inoue, Y. Kokubo, and K. Hama, Ultramicroscopy 0304-3991 10.1016/S0304-3991(98)00038-2 7, 147 (1981).