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MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

Epitaxial growth and orientation of GaN on (1 0 0) g-LiAlO2

(3) Hellman, E S a Liliental Weber, Z b Buchanan, D N E a

a LUCENT TECHNOLOGIES (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LITHIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; X RAY DIFFRACTION ANALYSIS;

CZOCHRALSKI GROWTH; INTERFACE ENERGY; LATTICE MISMATCH; ORIENTATION RELATIONSHIPS;

GALLIUM NITRIDE;

EID: 4043080582 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s1092578300001563 Document Type: Article

Times cited : (7)

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