Internal polarization fields in GaN/AlGaN multiple quantum wells with different crystallographic orientations

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Kuokstis, E ^a,b   Sun, W H ^a   Chen, C Q ^a   Yang, J W ^a   Khan, M Asif ^a  

^a University of South Carolina   (United States)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATIONS; HIGHER EMISSION INTENSITY; INTERNAL POLARIZATION FIELDS; SPECTRAL PARAMETERS;

CRYSTAL ORIENTATION; DEPOSITION; ELECTRIC FIELDS; GALLIUM COMPOUNDS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; POLARIZATION; SAPPHIRE; TEMPERATURE DISTRIBUTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20944440936     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1900287     Document Type: Article

References (34)

1. S. Nakamura, M. Senoh, N. Twasa, and S. Nagahama, Appl. Phys. Lett. 67, 1868 (1995).
2. S. Nakamura and G. Fasol, The Blue Laser Diodes (Springer, Heidelberg, 1997).
3. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).
4. C. A. Abermathy, in GaN and Related Materials, edited by, S. J. Pearton, (Gordon and Breach, New York, 1997), pp. 11-51.
5. S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, J. Appl. Phys. 87, 965 (2000).
6. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997);
7. F. Bernardini and V. Fiorentini, Phys. Rev. B ibid. 0163-1829 57, R9427 (1998);
8. V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, Phys. Rev. B ibid. 60, 8849 (1999)
9. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B ibid. 63, 193201 (2001).
10. D. A. B. Miller, D. C. Chemla, T. C. Damen, A. C. Grossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, Phys. Rev. Lett. 53, 2173 (1984).
11. D. A. B. Miller, D. C. Chemla, T. C. Damen, A. C. Grossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, Phys. Rev. B 32, 1043 (1985).
12. T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 36, L177 (1997).
13. J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 57, R9435 (1998).
14. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 36, L382 (1997).
15. W. A. Melton and J. I. Pankove. J. Cryst. Growth 178, 168 (1997).
16. P. Waltereit, O. Brandt, M. Ramsteiner, R. Uecker, P. Reiche, and K. H. Ploog, J. Cryst. Growth 218, 143 (2000).
17. S. Glosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Phys. Rev. B 65, 075202 (2002).
18. T. Sasaki and S. Zembutsu, J. Appl. Phys. 61, 2533 (1987).
19. C. R. Eddy, Jr., T. D. Moustakas, and J. Scanlon, J. Appl. Phys. 73, 448 (1993).
20. H. M. Ng, Appl. Phys. Lett. 80, 4369 (2002).
21. E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, and M. Asif Khan, Appl. Phys. Lett. 81, 4130 (2002).
22. A. Alemu, B. Gil, M. Julier, and S. Nakamura, Phys. Rev. B 57, 3761 (1998).
23. M. D. Craven, S. H. Lim, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 489 (2002).
24. S. Tripathy, R. K. Soni, H. Asahi, K. Iwata, R. Kuroiwa, K. Asami, and S. Gonda, J. Appl. Phys. 85, 8386 (1999).
25. Sugianto, R. A. Sani, P. Arifin, M. Budiman, and M. Barmawi, J. Cryst. Growth 221, 311 (2000).
26. H. Haug and S. W. Koch, Phys. Rev. A 39, 1887 (1989).
27. C. Weisbuch and B. Vinter, Quantum Semiconductor Structures (Academic, New York, 1991).
28. D. W. Palmer, www.semiconductors.co.uk
29. A. Dmitriev and A. Oruzheinikov, J. Appl. Phys. 86, 3241 (1999).
30. R. Cingolani, Phys. Rev. B 61, 2711 (2000).
31. S. Juršėnas, N. Kurilčik, G. Kurilčik, and A. Žukauskas, J. Appl. Phys. 78, 3776 (2001).
32. M. Smith, J. Y. Lin, H. X. Jiang, and M. Asif Khan, Appl. Phys. Lett. 71, 635 (1997).
33. S. F. Chicibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, and S. Nakamura, Phys. Status Solidi A 183, 91 (2001).
34. G. Traetta, R. Cingolani, A. Di Carlo, F. Della Sala, and P. Lugli, Appl. Phys. Lett. 76, 1042 (2000).