Well-width-dependent carrier lifetime in AIGaN/AIGaN quantum wells

Applied Physics Letters

Volumn 90, Issue 13, 2007, Pages

  Mickevicius J ^a   Tamulaitis, G ^a   Kuokstis E ^a   Liu, K ^b   Shur, M S ^b   Zhang, J P ^c   Gaska, R ^c  

^a VILNIUS UNIVERSITY   (Lithuania)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NONEQUILIBRIUM CARRIERS; PULSED EXCITATION; TRANSIENT GRATINGS;

ALUMINUM GALLIUM NITRIDE; CARRIER CONCENTRATION; DIFFRACTION GRATINGS; ELECTRIC FIELDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34047163490     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2717145     Document Type: Article

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