Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 2, 2010, Pages 391-395

  Lim, J Y ^a,b   Song, J D ^a   Choi, W J ^a   Yang, H S ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AVERAGE WIDTH; GROWTH PARAMETERS; HIGH ENERGY; INAS ISLAND; OPTIMAL CONDITIONS; SI SUBSTRATES; SILICON SUBSTRATES; THREE-DIMENSIONAL (3D); UNIFORM DISTRIBUTION;

GROWTH TEMPERATURE; SEMICONDUCTING INDIUM;

THREE DIMENSIONAL;

EID: 76949100170     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925475     Document Type: Article

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