Influence of growth temperature on structural and magnetic characterization of (In, Cr)As quantum dots

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 373, Issue 15, 2009, Pages 1379-1382

  Meng, H J ^a   Lu, J ^a   Chen, L ^a   Xu, P F ^a   Deng, J J ^a   Zhao, J H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

(In, Cr)As quantum dots; Magnetic semiconductor; Molecular beam epitaxy

Indexed keywords

FERROMAGNETISM; GALLIUM ARSENIDE; GROWTH TEMPERATURE; III-V SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOCRYSTALS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

4-STATE; FERROMAGNETIC SEMICONDUCTOR; GAAS(001); MAGNETIC CHARACTERIZATION; QUANTUM CONFINED EFFECTS; ROOM TEMPERATURE FERROMAGNETISM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 61349091023     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2009.02.031     Document Type: Article

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