Formation of nanometer-scale InAs islands on silicon

Journal of Electronic Materials

Volumn 28, Issue 5, 1999, Pages 432-436

  Sharma, P C ^a   Alt, K W ^a   Yeh, D Y ^a   Wang, D ^a   Wang, K L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; THREE DIMENSIONAL;

HETEROEPITAXY; STRANSKI-KRASTANOW GROWTH MODE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032679465     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0091-1     Document Type: Article

References (14)

1. Hao Lee, Roger Lowe-Webb, Weidong Yang and Peter C. Sercel, Appl. Phys. Lett. 72 (7), 812 (1998).
2. D. Leonard, M. Krishnamurthy, C.M. Reeves, S.P. DenBaars and P.M. Petroff, Appl. Phys. Lett. 63 (23), 3203 (1993).
3. J.M. Moison, F. Honzay, F. Barthe, L. Leprince, E. Andre and O. Vatel, Appl. Phys. Lett. 64 (2), 196 (1994).
4. T.I. Kamins, E.C. Carr, R.S. Williams and J.S. Rosner, J. Appl. Phys. 81 (1), 211 (1997).
5. O.G. Schmidt, C. Lange, K. Eberl, O. Kienzie and F. Ernst, Appl. Phys. Lett. 71 (16), 2340 (1997).
6. S. Frechengues, V. Drout, B. Lambert, D. Lemoine, S. Loualiche, A. Le Corre and H. L'Haridon, Appl. Phys. Lett. 71 (19), 2818 (1997).
7. I. Suemene, T. Tawara, T. Saitoh and K. Uesugi, Appl. Phys. Lett. 71 (26), 3886 (1997).
8. G.E. Cirlin, V.N. Petrov, V.G. Dubrovskii, S.A. Massalov, A.O. Golubok, N.I. Komyak, N.E. Ledentsov, Zh.I. Alferov and D. Bimberg, Tech. Phys. Lett. 24 (4), 290 (1998).
9. A. Ishisaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986).
10. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64 (16), 1943 (1990).
11. Hao Lee, Roger R. Lowe-Webb, Weidong Yang and Peter C. Sercel, Appl. Phys. Lett. 71 (16), 2325 (1997).
12. A. Ponchet, A. Le Corre, H. L'Haridon, B. Lambert and S. Salun, Appl. Phys. Lett. 67 (13), (1995).
13. D. Leonard, M. Krishnamurthy, S. Fafard, J.L. Merz and P.M. Petroff, J. Vac. Sci. Technol. B 12 (2) 1063 (1994).
14. G.D. Lian, J. Yuan, L.M. Brown, G.H. Kim and D.A. Ritche, Appl. Phys. Lett. 73 (1), (1998).