Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 115-118

  Song, J D ^a   Choi, W J ^a   Lee, J I ^a   Lee, J Y ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

AFM; InGaAs; PL; Quantum dots; Short period superlattices; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

AFM; INGAAS; PL; SHORT-PERIOD SUPERLATTICES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646203825     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.021     Document Type: Article

References (6)

1. Qui. P. Gogna Y., Forouhar S., Stinz A., and Lester L.F. Appl. Phys. Lett. 79 (2001) 3570
2. Shchekin O., and Deppe D. Appl. Phys. Lett. 80 (2002) 3277
3. Grundmann M., Heinrichsdorff F., Ledentsov N., Ribbat C., Bimberg D., Zhukov A., Kovsh A., Maximov M., Shernyakov Y., Lifshits D., Ustinov V., and Alferov Z. Jpn. J. Appl. Phys. 39 (2000) 2341
4. Mukai K., Nakata Y., Otsubo K., Sugawara M., Yokoyama N., and Ishikawa H. IEEE J. Quantum Electron. 36 (2000) 472
5. Song J.D., Park Y.J., Han I.K., Choi W.J., Cho W.J., Lee J.I., Cho Y.H., and Lee J.Y. Physica E 26 (2005) 86
6. Nakata Y., and Sugiyama Y. Semiconduct. Semimet. 60 (1999) 117