Fabrication of InAs quantum dots on silicon

Technical Physics Letters

Volumn 24, Issue 4, 1998, Pages 290-292

  Cirlin, G E ^a,b,c   Petrov, V N ^a,b,c   Dubrovskii, V G ^a,b,c   Masalov, S A ^a,b,c   Golubok, A O ^a,b,c   Komyak, N I ^a,b,c   Ledentsov, N N ^a,b,c   Alferov, Zh I ^a,b,c   Bimberg, D ^a,b,c  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032389550     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1262087     Document Type: Article

References (6)

1. N. N. Ledentsov, in Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, 1996, Vol. 1, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 19.
2. A. Ishisaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986).
3. G. M. Gur'yanov, V. N. Demidov, N. P. Korneeva, V. N. Petrov, Yu. B. Samsonenko, and G. É. Tsyrlin, Zh. Tekh. Fiz. 67(8) 111 (1997) [Tech. Phys. 67, 956 (1997)].
4. G. M. Gur'yanov, V. N. Demidov, N. P. Korneeva, V. N. Petrov, Yu. B. Samsonenko, and G. É. Tsyrlin, Zh. Tekh. Fiz. 67(8) 111 (1997) [Tech. Phys. 67, 956 (1997)].
5. V. A. Shchukin, N. N. Ledentsov, P. S. Kop'ev, and D. Bimberg, Phys. Rev. Lett. 75, 2968 (1995).
6. S. A. Kukushkin, and A. V. Osipov, Prog. Surf. Sci. 51, 1 (1996).