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Volumn 26, Issue 1-4, 2005, Pages 86-90
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Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices
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Author keywords
AFM; Atomic layer epitaxy; InGaAs; PL; Quantum dots; TEM
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CRYOSTATS;
DEPOSITION;
GROUND STATE;
LASERS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
RAMAN SCATTERING;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SUPERLATTICES;
TRANSMISSION ELECTRON MICROSCOPY;
WETTING;
AFM;
ATOMIC LAYER EPITAXY (ALE);
INGAAS;
WETTING EFFECTS;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 13544257226
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2004.08.029 Document Type: Conference Paper |
Times cited : (7)
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References (13)
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