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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 86-90

Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices

(8) Song, J D a Park, Y J a Han, I K a Choi, W J a Cho, W J a Lee, J I a Cho, Y H b Lee, J Y c

a Korea Institute of Science and Technology (South Korea)

b Chungbuk National University (South Korea)

c Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

AFM; Atomic layer epitaxy; InGaAs; PL; Quantum dots; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYOSTATS; DEPOSITION; GROUND STATE; LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

AFM; ATOMIC LAYER EPITAXY (ALE); INGAAS; WETTING EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13544257226 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2004.08.029 Document Type: Conference Paper

Times cited : (7)

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