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Volumn 26, Issue 1-4, 2005, Pages 86-90

Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices

Author keywords

AFM; Atomic layer epitaxy; InGaAs; PL; Quantum dots; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYOSTATS; DEPOSITION; GROUND STATE; LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

EID: 13544257226     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.08.029     Document Type: Conference Paper
Times cited : (7)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.