Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 16, Issue 1, 2010, Pages 106-113

  Ang, Kah Wee ^a   Liow, Tsung Yang ^a   Yu, Ming Bin ^a   Fang, Qing ^a   Song, Junfeng ^a   Lo, Guo Qiang ^a   Kwong, Dim Lee ^a,b,c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Republic Polytechnic   (Singapore)

Author keywords

CMOS circuit; Germanium; Integrated photonics; Near infrared; Photodetector; Silicon on insulator (SOI)

Indexed keywords

CMOS CIRCUIT; CMOS CIRCUITS; INTEGRATED PHOTONICS; NEAR INFRARED PHOTODETECTORS; SILICON-ON-INSULATORS;

BINARY SEQUENCES; BUDGET CONTROL; CMOS INTEGRATED CIRCUITS; CRYSTAL GROWTH; DELAY CIRCUITS; DESIGN; DETECTORS; FIELD EFFECT TRANSISTORS; GERMANIUM; IMPULSE RESPONSE; INFRARED DEVICES; MICROSENSORS; OPTICAL COMMUNICATION; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATE INTEGRATED WAVEGUIDES;

COUPLED CIRCUITS;

EID: 76949084932     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2025142     Document Type: Article

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