Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 704-707

  Ang, Kah Wee ^a   Zhu, Shi Yang ^a   Wang, Jian ^b   Chua, Khai Tze ^a   Yu, Ming Bin ^a   Lo, Guo Qiang ^a   Kwong, Dim Lee ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Germanium on silicon on insulator (Ge on SOI); Metal semiconductor metal (MSM) photodetector; Schottky barrier; Silicon carbon (Si:C)

Indexed keywords

COLOR IMAGE PROCESSING; GERMANIUM; MARKOV PROCESSES; NONMETALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SCHOTTKY BARRIER DIODES;

BARRIER LAYER (BL); DARK CURRENTS; ENHANCEMENT LAYER (EL); GERMANIUM ON SILICON (GOS); MSM PHOTODETECTORS; SCHOTTKY BARRIER (SB); SCHOTTKY-BARRIER HEIGHT (SBH);

SILICON;

EID: 47349105354     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.923540     Document Type: Article

References (17)

1. R. A. Soref, "Silicon-based optoelectronics," Proc. IEEE, vol. 81, no. 12, pp. 1687-1706, Dec. 1993.
2. J. M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J. M. Fedeli, M. Rouviere, L. Vivien, and S. Laval, "Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-μm photodetection," J. Appl. Phys., vol. 95, no. 10, pp. 5905-5913, May 2004.
3. G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, "High-speed germanium-on-SOI lateral PIN photodiodes," IEEE Photon. Technol. Lett., vol. 16, no. 11, pp. 2547-2549, Nov. 2004.
4. S. J. Koester, J. D. Schaub, G. Dehliner, and J. O. Chu, "Germanium-on-SOI infrared detectors for integrated photonic applications," IEEE J. Sel. Topics Quantum Electron., vol. 12, no. 6, pp. 1489-1502, Nov. 2006.
5. J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett., vol. 87, no. 4, p. 011 110, Jul. 2005.
6. L. Vivien, M. Rouviere, J.-M. Fedeli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. E. Melhaoui, E. Cassan, X. L. Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a silicon-on-insulator microwaveguide," Opt. Express, vol. 15, no. 15, pp. 9843-9848, Jul. 2007.
7. L.-H. Laih, T.-C. Chang, Y.-A. Chen,W.-C. Tsay, and J.-W. Hong, "Characteristics of MSM photodetectors with trench electrodes on P-type Si wafer," IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 2018-2023, Sep. 1998.
8. J. Oh, S. K. Banerjee, and J. C. Campbell, "Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers," IEEE Photon. Technol. Lett., vol. 16, no. 2, pp. 581-583, Feb. 2004.
9. T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, "Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition," Appl. Phys. Lett., vol. 90, no. 9, p. 092 108, Feb. 2007.
10. K.-W. Ang, K.-J. Chui, C.-H. Tung, N. Balasubramanian, G. S. Samudra, and Y.-C. Yeo, "Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions," IEEE Trans. Electron Devices, vol. 54, no. 11, pp. 2910-2917, Nov. 2007.
11. R. T. Tung, "Recent advances in Schottky barrier concepts," Mater. Sci. Eng., R Rep., vol. 35, no. 1-3, pp. 1-138, Nov. 2001.
12. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, "Fermi-level pinning and charge neutrality level in germanium," Appl. Phys. Lett., vol. 89, no. 25, p. 252 110, Dec. 2006.
13. K. Ikeda, T. Maeda, and S. Takagi, "Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel metal source/ drain MOSFET," Thin Solid Films, vol. 508, no. 1/2, pp. 359-362, Jun. 2006.
14. y," J. Appl. Phys., vol. 70, no. 4, pp. 2470-2472, Aug. 1991.
15. M. Mamor, J.-L. Perrossier, V. Aubry-Fortuna, F. Meyer, D. Bouchier, S. Bodnar, and J. L. Regolini, "Fermi-level pinning in Schottky diodes on IV-IV semiconductors: Effect of Ge and C incorporation," Thin Solid Films, vol. 294, no. 1/2, pp. 141-144, Feb. 1997.
16. A. K. Okyay, A. M. Nayfeh, K. C. Saraswat, T. Yonehara, A. Marshall, and P. C. McIntyre, "High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si," Opt. Lett., vol. 31, no. 17, pp. 2565-2567, Sep. 2006.
17. D. Buca, S. Winnerl, S. Lenk, S. Mantl, and C. Buchal, "Metal-germanium-metal ultrafast infrared detectors," J. Appl. Phys., vol. 92, no. 12, pp. 7599-7605, Dec. 2002.