High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding

Optics Express

Volumn 16, Issue 15, 2008, Pages 11513-11518

  Chen, Long ^a   Dong, Po ^a   Lipson, Michal ^a  

^a School of Chemical and Molecular Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; PHOTODETECTORS; PHOTONS; SILICON WAFERS; TEMPERATURE; WAVEGUIDES;

ION-CUT PROCESS; LOW TEMPERATURE WAFER BONDING; LOW TEMPERATURES; RESPONSIVITY; SILICON WAVEGUIDE; SUBMICRON;

WAFER BONDING;

GERMANIUM;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; LIGHT; OPTICS; PHOTOMETRY; RADIATION SCATTERING; SEMICONDUCTOR; SYSTEM ANALYSIS; TEMPERATURE; THEORETICAL MODEL;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GERMANIUM; LIGHT; MODELS, THEORETICAL; OPTICS; PHOTOMETRY; SCATTERING, RADIATION; SEMICONDUCTORS; SYSTEMS INTEGRATION; TEMPERATURE;

EID: 47849091243     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.011513     Document Type: Article

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