NBTI behavior of GE/HFO2/AL gate stacks

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 653-654

  Rahim, N ^a   Misra, D ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RELIABILITY PHYSICS;

RELIABILITY;

EID: 51549121825     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558972     Document Type: Conference Paper

References (11)

1. 2", APL, 87, 2005.
2. J. Chen et al, "Ultrathin A1203 and HfO2 Gate Dielectrics on Surface-Nitrided Ge" IEEE TED, 51, 9, 2004.
3. 2/Al MOS Devices," IEEE Transaction of Device and Materials Reliability, vol. 6, No. 3, pp. 455-460, 2006.
4. H. Okumura et al, "Carbon contamination free Ge(100) surface cleaning for MBE", Appl. Surf. Sci., 125, 1, 1998.
5. S. Mahapatra et al, "On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differencen in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversey?", IRPS, 2007.
6. 3 with NO, O and OH on Ge surfaces" Surf. Sci. 303, 1, 1994.
7. E.H. Nicollian et al, MOS Physics and Technology, Willey Classics Library, 1982.
8. M.A.Alam and S.Mahapatra, "A comprehensive model of PMOS NBTI degradation", Micro electron. Reliab., 45, 71, 2005.
9. M.A.Alam, "A Critical Examination of the Mechanics of Dynamic NBTI for PMOSFETs", Tech. Dig.-IEDM, 345, 2003.
10. W.P.Bai et al, "Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode", Proc. VLSI Techno. Symp., pp. 121-122, 2003.
11. 2/Si interfaces on nitrided and un-nitrided Si(100)", Journal of applied Physics, 91, 7, 2002.